a) Using the Thevenin equivalent circuit of the gate circuit, analyse the common-source amplifier circuit shown in Figure 1 to predict DC bias values for VGS, ID and VDs with the following circuit values: VDD = 15V, R = 2 kN, R = 1 kQ, R = 4.7 kQ, Rs = 2.7 kQ, R = 10 kQ, C = C = Cs = 100 F and the following MOSFET nominal characteristics: K = 20 mA/V Vto = 2.1 V st n 1 + v(1) R www + 10-1 C R VDD www R VDD RD Rs C HE Figure 1: Common Source Amplifier Circuit Cs RL +5