ALD company is planning on using the following mechanism to fabricate WS$2$ film with WF$6,H2,$ and

$H2S$ :

Step $1$: WF$6($g$)+3H2(g)W(s)+6HF(g)$

Step $2$: $W(s)+2H2S(g)$ WS$2($s$)+2H2(g)$

When buying the raw gases, what ratio should they get $($under the same temp. and pressure$)?$

Can $H2$ and $H2S$ will react? Based on this consideration, can they switch to CVD for this process?

An alternative sputtering way is to use: $,$ plasma$)+W(s)WS2(s)+H2(g).$

Assume we know: WF$6$ is $50$ USD$/$mol$,$ H$2$ is $20$ USD$/$mol$,$ H$2$S is $150$ USD$/$mol$,$ and W is $110$ USD$/$mol$.$

Shall they change to sputtering?