An abrupt silicon pn junction at zero bias has dopant concentrations of No = 1 X 1017 cm 2 and Ng = 5 X 1016 cm 3 at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 1.35 X 105 V/cm Emax = 3.21 X 105 V/cm Emax = 3.88 X 105 V/cm Emax = 1.70 X 105 V/cm Consider a palladium Schottky diode at T = 300 K formed on n-type silicon doped at Nd=5 X 1018 cm3. Determine the electric field at the metal junction for VR = 2 V. Emax = 3.11 X 106 V/cm Emax = 6.00 X 106 V/cm Emax = 2.18 X 106 V/cm Emax = 1.74 X 106 V/cm Play