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An ideal germanium pn junction has the parameters N-4105 cm, Na-2107cm, Dp- 48 cm/s, D-90 cm/s, tpo-no-2x10 s, and A-104cm. The intrinsic carrier concentration
An ideal germanium pn junction has the parameters N-4105 cm, Na-2107cm, Dp- 48 cm/s, D-90 cm/s, tpo-no-2x10 s, and A-104cm. The intrinsic carrier concentration for germanium is n=2.4x103 cm3. Determine the diode current for (a) a forward bias of 0.25 V and (B) a reverse-biased voltage of 0.25V.
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To determine the diode current we can use the Shockley diode equation I ...
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Fundamentals of Materials Science and Engineering An Integrated Approach
Authors: David G. Rethwisch
4th Edition
1118214226, 1118061608, 9781118214220, 978-1118061602
