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An n-type Si sample is doped at 1015cm-3. We shine light on it to create EHPs at 1019cm-3/s. What is the steady state concentration of
An n-type Si sample is doped at 1015cm-3. We shine light on it to create EHPs at 1019cm-3/s. What is the steady state concentration of minority carriers if the lifetime is 100 ns? How long does it take for the hole concentration to drop 10%, after the light is switched off? How long for the hole concentration to reach a value that is 10% higher than the thermal equilibrium value?
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