An unknown intrinsic semiconductor has a band gap of Eg = 1.1 eV. a) Calculate the intrinsic concentration of conduction electrons ni at the temperature of 300 K. For simplicity, assume here that the effective masses of electrons and holes are equal to the electron mass (m e = m h = me). b) Assume then that the semiconductor will be doped with donors with donor concentration being as 1015 cm3 . The donor level is at 0.2 eV below the conduction band edge Ec. Given that the Fermi level EF is 0.25 eV below Ec, calculate the concentrations of electrons and holes (n and p) in the semiconductor at the temperature of 300 K. Let's assume in this latter case that m e = m h (but m e = me). Hint: Use the given Fermi level EF (here equal to the chemical potential ) to calculate m h