Question
answer nd explain accordingly 1.what is the generator for the low impedance path in the Latch-up effect? 2.falsify;To reduce latch-up effect substrate resistance should be
answer nd explain accordingly
1.what is the generator for the low impedance path in the Latch-up effect?
2.falsify;To reduce latch-up effect substrate resistance should be high.
3.what is the effect of reduction of beta/alpha in the reduction in carrier lifetime
4. he parasitic PNP transistor has the effect of _______ carrier lifetime.
5.what element should the BJT gain to avoid the latch-up effect
6.provide the contributing factor to the catch up element in Sudden transient in power
7.how is thepositive feedback connect with f BJTs
8.elaborate with facts the main factor for reducing the latch-up effect?make sure you base onreduced n-well resistance
9.how is the vulnerability tolatch-up effect initiated by BiCMOS?
10..demonstrarwe the role of guard rings in reducing latch-up effect after introduction
reference
Yilmaz, H. (2015). Cell geometry effect on IGT latch-up.IEEE electron device letters,6(8), 419-4201
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