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Q11) i) For a MOSFET with Tox = 20 nm and NA =1e10cm-3, Find the subthreshold swing. iii) iv) v) If the oxide charge is nullified and the gate is n+ polysilicon, Find Vt At Vg=OV and Vd=10 mV, (W/L)*U* Cox=2e-2 AV-2 Find Id Using i), @ Vt, Id=? If Vt is needed to shift to 0.5V calculate the body bias