Assume a Si npn bipolar transistor at T-300K with the following minority carrier parameters De-8 cm2/s. DB-20 cm%, Dc = 12 cm%, TCO= 10-6 S, TB0-10-7 S, TEO-10-8 S If the emitter doping concentration is NE- 5x1018cm3 and base doping concentration is N 5x1016cm3, design the transistor for a base transport factor ?? = ? = 0.997, and Xe- XB-1 ?m, by finding the common-emitter current gain, B