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at room temperature (300), belonging to the band (Ec and Ev) edges semiconductor whose energy levels and Fermi energy (Ef) levels are as follows EC=

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at room temperature (300), belonging to the band (Ec and Ev) edges semiconductor whose energy levels and Fermi energy (Ef) levels are as follows EC= - 4.2 eV, Ev= - 6.0 eV, and Ef= -5.2 ev a) What is the probability of finding a gap at the conduction band edge of the respective semiconductor? b) What is the probability of finding a gap at the valence band edge of the respective semiconductor

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