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(B). A silicon sample is doped with a donor concentration of ND=51015cm3 and an acceptor concentration of NA=31015cm3. What are the electron and hole concentrations
(B). A silicon sample is doped with a donor concentration of ND=51015cm3 and an acceptor concentration of NA=31015cm3. What are the electron and hole concentrations at T=300K assuming complete ionization
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