(b) (i) Write the expressions of carrier concentrations, n and p in terms of intrinsic carrier concentration, n, intrinsic Fermi level, E and Fermi level,
(b) (i) Write the expressions of carrier concentrations, n and p in terms of intrinsic carrier concentration, n, intrinsic Fermi level, E and Fermi level, EF . [2 marks] (ii) If n=1x1015 cm for Si at 300 K, find the difference between EF and E, in ev. [4 marks]
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