Boron pre-deposition is performed on a silicon substrate to its solid solubility limit for 30 mins at a temperature of 900C. The wafer is then encapsulated and a drive-in is performed at 1050C. Afterwards the surface concentration of boron was determined to be 8.0x1018 cm. (a) Calculate the deposited QT (b) What was the drive-in time? (c) If the substrate is uniformly doped with phosphorus to a concentration of 1x105 cm, determine the junction depth. (d) Plot and label the concentration profile after anneal. (Assume the solid solubility limit of B is 1.2x1020 cm).