Calculate the number of bound states and the lowest energy level for electrons and light and heavy holes in a GaAs well 6 nm wide sandwiched between layers of A10.35Ga0.65 As. How good an approximation is an infinitely deep well? Hence recalculate the energy of the optical transition in the 6 nm well in the sample whose photoluminescence was shown in Figure 1.4. How much difference does the finite depth make? Does it improve agreement with experiment, or are there any signs of error (in the model or the growth)? How large a shift would occur if the thickness of the well were to fluctuate by a monolayer?

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