Can get the solution for these physics problems? The subject is thermodynamics.

Recommended Text: Finn's Thermal Physics, third edition (CRC Press, 2017). copy/paste the link below to access the textbook.

file:///C:/Users/menhe/Downloads/Finn's%20Thermal%20Physics%20(3rd%20Ed).pdf

_1&course_id=_53795_1 Help ? 2 (c) Way back, we said that an entropy change is the ratio of the amount of heat that flows to the temperature at which it flows. Here, the process is isothermal, so AS = (6) where Q is the net flow of heat into the body as we bring up the field from 0 to By. Evaluate Q in terms of V, C, Bf, #o and T. What is its sign, and what does that mean? Problem 3: Electronic Band Structure A semiconductor is a type of material that is in some ways intermediate between a regular conductor of electricity and an electrical insulator. Examples include the elements silicon and germanium, which lie in between the metals and the nonmetals on the Periodic Table. In a semiconductor, there are two allowed ranges of energies that electrons can have, called the valence band and the conduction band. The forbidden region in between the two is known as the band gap. In order for an electron to move around inside the semiconductor, it has to be in the conduction band, not the valence band. When the semiconductor is cold, the valence band is full of electrons and the conduction band is empty. Thermal fluctuations, which we can describe using the canonical distribution, boost electrons up from the valence band to the conduction band. The number of electrons in the valence band will be proportional to the Boltzmann factor BEsap , where Egap is the width of the band gap. To be a little more detailed, N - VC(kBT)3/2e Egap/ (kel) (7) Here, C is a constant that depends upon the particular material (silicon, germanium, gallium arsenide, etc.). (a) To what does Eq. (7) reduce at low temperature, i.e., keT much less than Egap? (b) What about high temperature? (c) Silicon has a band gap of about 1.1 electron volts (eV). What is the ratio of this to the thermal energy keT at room temperature? Would you call room temperature "low" or "high" as far as silicon is concerned? (d) How, qualitatively speaking, does the temperature dependence of a semiconductor's ability to conduct electricity differ from that of a metal?+ 479440_1&course_id=_53795_1 Help ? Problem 1: Short Answers (a) What is the Shannon entropy of a probability distribution that puts 100% probability on a single microstate and 0% on all the others? (b) What is the Shannon entropy of a probability distribution that puts an equal proba- bility of 1/0 on some number $2 of different microstates, and 0 on all the others? (c) Consider a two-level system with energy levels 0 and e (where e > (). Which is bigger: the Shannon entropy of the canonical distribution at low T, or the Shannon entropy of the canonical distribution at high T? (d) Recall the Maxwell relation OP av (1) as And recall that for a system described by pressure and volume, work was -PdV, while for a magnet, it is BodM. Write the Maxwell relation for magnets that corresponds to Eq. (1). Problem 2: Heat Flow During Magnetization Suppose we have a body of volume V that is a Curie paramagnet, i.e., it satisfies the Curie law Xm T (2 This is related to the total magnetization M by the formula HOM Xm V Bo (3) where Bo is the applied magnetic field. There are Maxwell relations for magnetization just like there are for pressure and volume. One such relation is OM os aT Bor (4) (a) Using this information, find the partial derivative of the entropy S with respect to the applied field Bo at constant temperature T. (b) Suppose we gradually increase the applied field Bo up from 0 to a final value By, while holding the temperature constant. During this process, the entropy is given by (Bo as s = f(T) +J aBolt (5) where f(T) is some function of T. (You can take the partial derivative of both sides with respect to Bo to verify this.) Find an expression for the entropy S in terms of C, V. Ho, T. Bo and the unknown function f (T)