Compare a Phosphorus implantation (50 keV) over a target made of SiO₂ (300) layer on the top of Si wafer, (by and a target made of Si wafer. Compare your results with the following graphic. What can you conclude? By adding a sacrificial layer on top of the Si wafer, we can shift the peak of the implant profile to the surface of the Si

2500 600 Range 500 2000 Sigma ..... 400 1500 Phosphorus Range (A) 300 Sigma (A) 1000 Arsenic 200 500 100 Antimony O 50 100 150 200 Energy (kev) (A)