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Computer science engineering.. 1. Power Diode Characteristics: A FORWARD CONDUCTION OR VA +VA REVERSE LEAKAGE CURRENT AVALANCHE BREAKDOWN The reverse recovery characteristics of the Power

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1. Power Diode Characteristics: A FORWARD CONDUCTION OR VA +VA REVERSE LEAKAGE CURRENT AVALANCHE BREAKDOWN The reverse recovery characteristics of the Power diode is shown in the following figure. From the figure, we can understand the turn off characteristic of the diode. The Reverse recovery time tre is the time interval between the application of reverse voltage and the reverse current dropped to 0.25 of IRR LE o 0.251 RR - Diode is a two terminal P-N junction semiconductor device, with terminals anode (A) and cathode (C). Symbol: The symbol of the Power diode is same as signal level diode. Anode K Cathode If rminal A experiences a higher potential compared to terminal K, the device is said to be forward biased and a forward current will flow from anode to cathode. This causes a small voltage drop across the device ( #include "Triangle.h" using namespace std; int main() { Triangle trianglen; Triangle triangle2; // TODO: Read and set base and height for triangle1 (use SetBase() and SetHeight()) // TODO: Read and set base and height for triangle2 (use SetBase() and SetHeight()) // TODO: Determine larger triangle (use GetArea()) cout

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