Consider a Altext{-}SiO_2text{-}SiAl-SiO2-Si MOS device with donor density in silicon, N_D = 5 times 10^{15} : cm^{-3}ND=51015cm3. The work function of Al is Al=4.1V and

Consider a Al\text{-}SiO_2\text{-}SiAl-SiO2-Si MOS device with donor density in silicon, N_D = 5 \times 10^{15} \: cm^{-3}ND=5×1015cm−3.

The work function of Al is ΦAl=4.1V and the electron affinity of Si and SiO_2SiO2 are χSi=4.05Vand χSiO2=0.95V, respectively.

Calculate the conduction band discontinuity at the metal-oxide interface.