Consider a pn junction with the p region doped 1023 atoms mo and the n region doped 1019 m" at 300 K. The intrinsic carrier concentration min silicon is 1.5x1016 mo at 300 K. Assume KT=0.026 ev and kT/q=0.026 V where T is the absolute temperature in degrees Kelvin and k is Boltzman's constant. Assume that the electron mobility He=0.04 m?/Vs and that the hole mobility uh=0.02 m2/Vs. Assume that the diffusion coefficient of electrons De=0.0038 m/s while that of holes Dh=0.0012 m/s. The thickness of the p region is 3 micron while the thickness of the n region is 5 micron. b. Apply a forward voltage of 0.5 V and calculate the contact potential with this forward voltage applied. Draw the energy band profile with this forward voltage applied showing the conduction and valence bands, the Fermi energy, the depletion region and the contact potential energy