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Consider an n-channel MOSFET (Si substrate) with grounded source and the following parameters: Oxide (SiO2) thickness: 10nm Oxide dielectric constant: i = 3.90 Threshold voltage:
Consider an n-channel MOSFET (Si substrate) with grounded source and the following parameters: Oxide (SiO2) thickness: 10nm Oxide dielectric constant: i = 3.90 Threshold voltage: VT = 0.4V Effective carrier mobility: e f f = 800cm2/V s
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