Consider an n-channel Si MOSFET with an oxide thickness d=200, a channel mobility n=1000 cm2/Vs, width Z=100m, length L=5m, and substrate doping Na=1015 or 1017 cm-3. Calculate and plot ID(VD, VG) for VD ranging from 0 to 5V, and VG=0,1,2,3,4,5V. Assume the gate is an n polysilicon-gate, and the interface charge is Qi=51011 e/cm2. Note: The SiO2 relative dielectric constant is 3.9