Consider an n-type MOSFET with NA=71018 m3 . The gate length of the MOSFET L=2 m, width W=12 m and the oxide thickness tox= 8 nm. Take NC =NV =1025 m3 , EG=1.12 eV, ni=1.51016 m3 , kT=0.026 eV, vacuum permittivity =8.8541012 F/m, dielectric constant of oxide ox=4, dielectric constant of silicon Si=12, electron mobility n=230104 m2/Vs, hole mobility p=83 104 m2/Vs