Consider the doping of Si-wafers by ion implantation, in which phosphorous is implanted in a thin layer (0.1m) on the surface of the wafers. The concentration of the Implanted-P is 1021 atoms cm3. After implantation the wafers are subjected to diffusion processing for 5hrs. at 1323K. Calculate the concentration of P (in atoms cm3 ) at 2m from the surface after diffusion processing. Data: At 1323K the diffusion coefficient of P in Si is 1017m2s1