Consider the nominal AlGaAs/GaAs (Ec = 0.25eV) HEMT structure shown in the figure. The sheet charge in the channel is 11012 cm2. (a) Calculate the sheet doping in the donor layer required to achieve that. Show clearly the electric field distribution and the resultant band diagram of the structure. (b) I wish to now have a flat quantum well (as opposed to a triangular quantum well) holding the same sheet charge density. First, clearly state the design methodology to achieve this. Next, proceed with the quantitative analysis