Draw the band diagram of the metal-semiconductor contact (metal and n-type GaAs) including numerical values of depletion width (W) and built-in-potential barrier (qVo) with n-type doping levels of 105 cm and 108 cm. Assume the barrier height (Schottky-barrier = 0.8 eV), intrinsic carrier concentration of GaAs = 2 x 106 cm at 300 K, 8GaAs, is 13.1, 80-8.85x10-4 F/cm, and bandgap of the GaAs at 300 K = 1.4 eV. Assume T-300K and KT=0.0259eV (b) Please provide in-depth discussion (including numerical value of doping concentration) for how we can make a facile Ohmic contact using the same metal-semiconductor contact of (a). Assume the electron tunneling can be provided with barrier width less than 10 nm.