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engineering
electrical engineering
october 2019
11

Electrical Engineering Questions and Answers October 11, 2019

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A silicon semiconductor is in the shape of a rectangular bar with a cross-sectional area of 100 m, a length of 0.1 cm, and is doped with 5x 10 16 cm -3 boron atoms and 1.5 10 17 cm -3 arsenic atoms. The electron and hole mobilities as a function of doping are shown below. The temperature is T= 300 K. Assume n i =10 10 cm -3 . (a) Determine the

1500 Electrons Temperature 300 K 8 1000 Holes 500 104 10t5 106 107 1045 1019 Doping Concentration (cm) 10 Mobility (cmV sec)

A signal g(t)=sinc^2 (5t) is sampled (using uniformly spaced impulses) at a rate of i) 5Hz ii) 10Hz iii) 20Hz. For each of the three cases: Sketch the sampled signal Sketch the spectrum of the sampled signal. Explain whether you can recover the signal g(t) from the sampled signal. If the sampled signal is passed through an ideal low pass filter of

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