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Estimate the ground state energy in the triangular quantum well formed at the p-N GaAs/Al0.25Ga0.75As heterojunction. An infinite high barrier at the heterojunction is assumed
Estimate the ground state energy in the triangular quantum well formed at the p-N GaAs/Al0.25Ga0.75As heterojunction. An infinite high barrier at the heterojunction is assumed in this
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