Field-assisted emission in MOS devices Metal-oxide-semiconductor (MOS) transistors in micro- electronics have a metal gate on an SiO2 insulating layer on the surface of a doped Si crystal. Consider this as a parallel plate capacitor. Suppose the gate is an Al electrode of area 50 m 50 m and has a voltage of 10 V with respect to the Si crystal. Consider two thicknesses for the SiO2, (a) 100 and (b) 40 , where (1 = 1010 m). The work function of Al is 4.2 eV, but this refers to electron emission into vacuum, whereas in this case, the electron is emitted into the oxide. The potential energy barrier B between Al and SiO2 is about 3.1 eV, and the field-emission current density is given by Equation 4.48a and b. Calculate the field-emission current for the two cases. For simplicity, take me to be the electron mass in free space. What is your conclusion