Figure A.1 shows the Reflection high energy electron diffraction (RHEED) specular spot intensity recorded during the growth of a GaAs layer. If the peak values are 7.0 and 35.6 seconds for Peak A and B in Figure A.1, respectively, estimate the growth time required for the 200-nm GaAs layer based on the growth rate in Figure A.1. The average thickness of a GaAs monolayer is 0.28 nm.

 

A B ww. 20 30 50 10 40 Time (s) Figure A.1 Specular Spot Intensity