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Find the current passing through the doped si rod shown in the figure. The electron density is 2.6times 10 ^ 20 carriers/m^3. At room
Find the current passing through the doped si rod shown in the figure. The electron density is 2.6\times 10 ^ 20 carriers/m^3. At room temperature, carrier densities are approximately given below: np 2.4x 1019 carriers/m^3 for Ge and n = p = 1.5\times 101 carriers/m^3 for SiTypical hole and electron mobility values for Ge and Si are as in the table.
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Income Tax Fundamentals 2013
Authors: Gerald E. Whittenburg, Martha Altus Buller, Steven L Gill
31st Edition
1111972516, 978-1285586618, 1285586611, 978-1285613109, 978-1111972516
