For the CMOS inverter in a p-well technology as shown in Figure 2. If this inverter is driving an identical inverter, find the magnitude of the output pole at the output of the first inverter (Vx). Express this pole in Hz. The table below will help calculate capacitances and is based on an oxide thickness of 140Ao or Cox = 24.7 x 10-4 F/m2

For the CMOS inverter in a p-well technology as shown in Figure 2. If this inverter is driving an identical inverter, find the magnitude of the output pole at the output of the first inverter (Vx). Express this pole in Hz. The table below will help calculate capacitances and is based on an oxide thickness of 140A or Cox = 24.7 x 10-4 F/m Type CGSO CGDO CGBO CJ CJSW MJ MJSW P-channel 250 250 650 550 300 0.5 0.35 N-Channel 250 250 650 750 350 0.5 0.4 Units fF/m fF/m fF/m fF/m2 fF/m Metal Poly well -substrate +5V 1 +5V M2 M4 Your (2.5V) (2.5V) (2.5V) MI H Su04E3P3A Ground Su042.JP38 Figure 2 CMOS inverter. For the CMOS inverter in a p-well technology as shown in Figure 2. If this inverter is driving an identical inverter, find the magnitude of the output pole at the output of the first inverter (Vx). Express this pole in Hz. The table below will help calculate capacitances and is based on an oxide thickness of 140A or Cox = 24.7 x 10-4 F/m Type CGSO CGDO CGBO CJ CJSW MJ MJSW P-channel 250 250 650 550 300 0.5 0.35 N-Channel 250 250 650 750 350 0.5 0.4 Units fF/m fF/m fF/m fF/m2 fF/m Metal Poly well -substrate +5V 1 +5V M2 M4 Your (2.5V) (2.5V) (2.5V) MI H Su04E3P3A Ground Su042.JP38 Figure 2 CMOS inverter