Help with fabrication engineering homework please!

2. Consider the following aluminum interconnects which are fabricated on top of a 0.5 um (tox) layer of SiOg grown on a silicon wafer (which is at ground potential), as shown below. The line-to-line spacing (s) of these interconnects is 0.2 run. the A] thickness (t m) is 0.4 um. length L is 500 um, and width (w) is 0.2 pm. The gap (5) between the lines is lled with SiOg as the dielectric. For the middle (B) interconnect, calculate: a. its capacitance with respect to the substrate b. its capacitance due to identical lines (A and C) on each side c. the delay for a signal in this line. Dielectric constant of SlOg =39 Resistivity (p) of A1 = 3 XlO'6 Q-cm Pennittivity of free space = 8.85.4 x 10'12 1:..-"'1n Silicon oxide ( tax}