HW7: a) A Si wafer is oxidized in wet oxygen at 1000C for 2 hours. Find the oxide thickness in Fig. A. Then, a window is etched in the oxide and re-oxidized in dry oxygen to make a gate oxide at 1100C for 1 hour. b) Find the oxide thickness in the window in Fig. B. c) Find the oxide thickness under the first oxide in Fig. B. Due on March 5th 11:59pm SiO2 Removed by etching Wet Oxidation SiO2 SiO2 Si B Dry Oxidation-Gate oxide HW7: a) A Si wafer is oxidized in wet oxygen at 1000C for 2 hours. Find the oxide thickness in Fig. A. Then, a window is etched in the oxide and re-oxidized in dry oxygen to make a gate oxide at 1100C for 1 hour b) Find the oxide thickness in the window in Fig. B. c) Find the oxide thickness under the first oxide in Fig. B. Due on March 5th 11:59pm sio, Removed by etching Wet Oxidation Sio Sio SI B Dry Oxidation-Gate oxide HW7: a) A Si wafer is oxidized in wet oxygen at 1000C for 2 hours. Find the oxide thickness in Fig. A. Then, a window is etched in the oxide and re-oxidized in dry oxygen to make a gate oxide at 1100C for 1 hour. b) Find the oxide thickness in the window in Fig. B. c) Find the oxide thickness under the first oxide in Fig. B. Due on March 5th 11:59pm SiO2 Removed by etching Wet Oxidation SiO2 SiO2 Si B Dry Oxidation-Gate oxide HW7: a) A Si wafer is oxidized in wet oxygen at 1000C for 2 hours. Find the oxide thickness in Fig. A. Then, a window is etched in the oxide and re-oxidized in dry oxygen to make a gate oxide at 1100C for 1 hour b) Find the oxide thickness in the window in Fig. B. c) Find the oxide thickness under the first oxide in Fig. B. Due on March 5th 11:59pm sio, Removed by etching Wet Oxidation Sio Sio SI B Dry Oxidation-Gate oxide