i) Compute the intrinsic carrier concentration, ni (cm-3) for undoped Si at 300 K. ii) What are the hole (p) and electron (n) concentrations (cm-3) at 300 K of 1 x 1016 B-doped Si? iii) Compute the position of the Fermi level, relative to the valence band maximum for this B-doped sample. iv) compute its conductivity.