In a Si semiconductor sample of 200 jum length at 600 K the hole concentration as a function of the sample length follows a quadratic relation of the form p(x) = 1x10x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/Cm O 5805 V/Cm O 55.56 V/cm O 6.450 V/cm