= -0.5 V, k, = 4 mA/V?, and Ap In Fig. P1, the PMOS transistor has Vp mA, and IRI = 0.1 ID. (a) Please design the values of RI, R2 and R3 such that Vo = 3.5 V. (b) Please design the values of R1, R2 and R3 such that the PMOS transistor operates at the boundary between the saturation region and triode region. = 0. VDD = 5 V, Ip = 0.5 VDD VDD IRI R1 ww Vo Ovo R2 R1 R2 R3 IRI R3 (a) Fig. P1