-In problem 1 and Fig. 3.32, assume that instead of the piezoresistive patch, a PZT layer of thickness tp is deposited in the same location near the clamping edge of the cantilever beam. Derive an analytical expression for the induced voltage across the PZT layer as a function of the sensed acceleration.

0.21, m. 3. Shown below is a bulk silicon accelerometer with doped piezoresistive material of gauge factor 6 near the clamped end of the beam. Derive an expression for the normalized change in resistance as a function of the sensed acceleration a. Assume the beam has a width W. Proof mass Ptzcorcsmor m Figaz. A piezoresistive bulk Silicon accelerometer. 0.22, CH. 3. 2ln problem 1 and Fig. 3.32, assume that instead of the piezoresistive patch, a PZT layer of thickness t;' is deposited in the same location near the clamping edge of the cantilever beam. Derive an analytical expression for the induced voltage across the PZT layer as a function of the sensed acceleration