In semiconductors, in some simple quantum mechanical models, we can treat electrons as having an effective mass meff that is different from the free electron mass mg. For example, in the material GaAs, the effective electron mass is meff m 0.07m0. Presurne for simplicity that the electron in a thin layer of GaAs behaves as a particEe in a one-dimensional box with infinitely high barriers on either side. Relative to the energy at the "bottom" of the box, calculate the confinement energy (i.e. the lowest electron eigenenergy E1 ) in meV (millielectron-Volts) for an electron in a GaAs layer that is lOnm thick, under the above assumptions. Give your answer to three significant figures (entering only the number, not any units). [Note: you may need this answer later, so it is important to get it correct. We have given you a relatively large number of attempts at this question as a result] Continuing with the same structure as the previous question, perpendicular to the layer, now we apply an electric field of 10 Wmicron (i.e.107 Vim). What is this field in our dimensionless units, where one unit of field corresponds to a potential energy difference between one side of the well and the other of E1? Give your answer correct to three significant figures. [Note: you may need this answer later, so it is important to get it correct. We have given you a relatively large number of attempts at this question as a result]