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a. What is the height of the steps and terrace width for this situation in a typical schematic shown for a broken bond model?

a. What is the height of the steps and terrace width for this situation in a typical schematic shown for a    Suggest a method you will use to achieve a transition to the other growth mechanism. (c) The lattice

a. What is the height of the steps and terrace width for this situation in a typical schematic shown for a broken bond model? State your assumptions clearly. Simple cubic b. Assuming a continuous incoming adatom flux of 1 x 102 cm-s- during the growth and the surface adatom diffusivity on the substrate surface of 10-16 ms-1, provide a quantitative argument for the dominant growth mechanism here (between layer-by-layer and step flow). Please make suitable assumptions and explain your rationale behind these assumptions. Suggest a method you will use to achieve a transition to the other growth mechanism. (c) The lattice parameter of silicon is 5.431 . CoSi2 and NiS2 crystallize in the cubic CaF2 with lattice parameters of 5.365 and 5.406 respectively. Calculate the misfit strain between silicon and the two silicides. What is the expected dislocation density for fully relaxed films of CoSi2 and NiS2 grown on silicon?

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SOLUTION a The height of the steps and terrace width in a typical schematic for a broken bond model of a cubic surface can be estimated as follows The step height h can be estimated using the Bondcutt... blur-text-image

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