Incorrect Question 3 0/1 pts When implanting BF2, how does the F affect the semiconducting properties of the devices? The large BF2 molecules stretch the Si crystal lattice, causing microbumps in the surface The F channels deep into the wafer, while the B stays close to the surface The F cause reverse ionic inversion, used in the creation of special device characteristics Fick's law says it's not possible to implant F Ftends to diffuse out, so has no significant effect