Know the band structure of a metal under zero bias and with voltage bias, including direction of electric field / battery. Be able to mark all important features on the diagram and label them correctly including Ef, Eb, the workfunction. Be able to draw diagrams of bonding and antibonding wavefunctions for electrons in a metal. Be able to describe an experiment that supports the idea of band structure in a metal and from which E; can be calculated. Know how to calculate electric velocity from Fermi energy for a metal. Be able to describe how conduction in a metal occurs in terms of the momentum transferred to electrons. Calculation of current density from electric field for a metal (see Semester 1). Recognise terms and be able to use the full equation for n;for an instrinsic semiconductor, including calculation of the density of states in the valence and conduction band and use of the energy gap in these calculations. Be able to explain the concept of effective mass in semiconductors. Be able to draw band structure of intrinsic semiconductor under zero bias and voltage bias including all relevant labels. Be able to draw the bonding arrangement of atoms in silicon and how this leads to its bandstructure. Recognise / understand / be able to use the Fermi-Dirac function, be able to show it behaves in all relevant limits of E and T and be able to perform calculations of its value for different temperatures