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Kp. Example 1: The thickness of silicon oxide grown on a (100) silicon wafer oxidized in a wet ambient at 1100 C for 60 minutes

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Example 1: The thickness of silicon oxide grown on a (100) silicon wafer oxidized in a wet ambient at 1100 C for 60 minutes can be calculated from the figure on the previous page to be ~6400A (0.64 pm). Example 2: Note that if the oxidation were performed in a dry ambient for 60 minutes, the oxide thickness would only be ~1300A

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