Let us assume we have a 120 m wide x 500 m long pattern in a SiO 2 layer on top of a silicon wafer.

Let us assume we have a 120 µm wide x 500 µm long pattern in a SiO₂ layer on top of a silicon wafer. What is the required etching time in minutes to release such a pattern in KOH in order to create a cantilever? We assume the wafer orientation is (100), the same as in the bi-morph example, and that the patterns are oriented at 45° from the flat as in the bi-morph example.