Metal contacts (dark grey) of 80 m width (W) were formed on top of a Si wafer with a uniformly doped n+area (blue region) to form a TLM test structure as shown in the figure below. The following data was measured from the test structure: Distance, L (um) Resistance, RT (2) W K 4 L 30 28.4 L L2 40 38.1 Determine the sheet resistance of the n+ area, contact resistance, and the specific contact resistivity. (2P) L3 50 46.6 L4 70 64.7 L4 L5 80 72.8