Notes:

• SHOW ALL WORK for full credit

• Unless otherwise specified, assume a room temperature of 300K.

• For numerical answers, use three digits of precision/three significant digits/three

significant figures, e.g. W.XY × 10z. Always specify units.

• Specify any Baliga equations used by their equation numbers.

• If you use software to perform a calculation, include a screen shot or pdf. Clearly

explain the solution method in words.

Problem #1: Using the equations provided in Baliga, design two parallel plane diodes that can

withstand a reverse bias of 1.7kV. The first diode should have a drift region of n-type silicon, and

the second diode should have a drift region of n-type 4H-SiC. For each diode, specify: the donor

doping in the drift region, the ideal thickness of the drift region, the critical electric field at

breakdown, and the on-resistance. For each diode, calculate the temperature at which the intrinsic

charge carrier concentration is equal to the drift-region doping concentration. Explain the

significance of your results.