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P ions implanted into undoped Si have a Gaussian profile with a peak dopant concentration of 4.5x10^20 ions/cm3 at 0.25 um and a surface dopant

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P ions implanted into undoped Si have a Gaussian profile with a peak dopant concentration of 4.5x10^20 ions/cm3 at 0.25 um and a surface dopant concentration of 1.5x10^1 ions/cm3. a. Calculate the ion straggle for the P implant b. Calculate the total P dose implanted in the Si

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