Photoresist is a light-sensitive material applied to semi- conductor wafers so that the circuit pattern can be imaged on to the wafer. After application, the coated wafers are baked to remove the solvent in the photoresist mixture and to harden the resist. Here are measurements of photoresist thickness (in kA) for eight wafers baked at two different tem- peratures. Assume that all of the runs were made in random order. 100C 11.176 5.263 7.089 6.748 8.097 7.461 11.739 7.015 11.291 8.133 10.759 6.467 8.315 95C 7.418 3.772 8.963 (a) Is there evidence to support the claim that the higher baking temperature results in wafers with a lower mean photoresist thickness? Use a = 0.05. (b) What is the P-value for the test conducted in part (a)? (e) Find a 95 percent confidence interval on the difference in means. Provide a practical interpretation of this inter- val. (d) Draw dot diagrams to assist in interpreting the results from this experiment. (e) Check the assumption of normality of the photoresist thickness. (1) Find the power of this test for detecting an actual differ- ence in means of 2.5 kA. (g) What sample size would be necessary to detect an actual difference in means of 1.5 kA with a power of at least 0.9?