Please, anser all the parts of the question. The subject is semiconductor devices.

2. An n-channel GaAs MESFET has been fabricated on semiinsulating substrate. It has a uniformly doped channel of ND-10 17 cm-3, with 0.9 V, a 0.2 m, L-1 m, and Z- 10 um (a) Is this an enhancement- or depletion-mode device? (b) Find the threshold voltage. (c) Find the saturation current at VG 0 (for constant mobility of 5,000 cm2/V-s)