Please provide detailed steps so that I can understand key concepts on how to solve questions like this. Thank you.

1. You have a Si1xGex/Si heterostructure. a. Determine the critical layer thickness (h) for such a layer, assuming it is linearly graded whereby " x " increases by 5%/m. b. Compare this value for such a graded layer with thickness of 0.5m to that of a uniform alloy layer of the same average composition, also 0.5m thick. The lattice parameter of Si1xGex( at 300K) is: 5.431+0.20x+0.027x2 Young's modulus is (130.2 - 28.1x) GPa Elastic strain is 0.0418x Interfacial energy =10f[Yb/42], where b= the Burger's vector, assume to be 0.4nm in this case