please solve the calculations, A-G but not F or C.

1. Electronic Properties of Semiconductors Table 13.5 of the Shackelford textbook lists properties of common intrinsic semiconductors at T=300K. Note that I would prefer to use the terminology of intrinsic carrier concentration, ni, instead of carrier density [m3] in this table. (a) Using the information in Table 13.5 calculate the conductivity of intrinsic Ge AND GaAs at 300K. (b) Using the values of conductivity you calculated at 300K, calculate the pre-exponential factor, 0, for intrinsic Ge AND GaAs in the conductivity equation (T)=0exp(2kBTEg). (c) Using your favorite plotting program (e.g., Matlab, Excel, Python, Origin), create an Arrhenius plot of the conductivity (T) for intrinsic Ge AND GaAs over the temperature range from 100 to 1000K. Plot both curves on the same plot to be able to directly compare their conductivity values. Include axes labels (including appropriate units) on your plot. Only computer-generated plots will be given full credit. The y-axis is often plotted on a log scale rather than calculating ln(). In this way the values can be read directly from the plot. (d) Consider that instead of intrinsic Ge AND GaAs, each of the semiconductors is doped with 11018cm3ofm donors. Calculate ne and nh for Ge AND GaAs at 300K assuming that you are within the extrinsic regime at this temperature. Note that I would prefer to use the terminology that the extrinsic regime corresponds to the temperature regime where ALL the dopants are ionized. (e) Calculate the conductivity of your extrinsic Ge AND GaAs samples at 300K. Use the mobility plot provided on page 2 . (f) Provide two examples of donor dopants that could be utilized in Ge. Provide two examples of donor dopants that could be utilized in GaAs. For GaAs, specify which lattice site the dopant atoms occupy. (g) Consider instead that you have Ge AND GaAs doped with 11018cm3 of acceptors. Calculate the conductivity of your extrinsic Ge AND GaAs samples at 300K assuming that you are within the extrinsic regime at this temperature. Use the mobility plot provided on page 2. (h) Provide two examples of acceptor dopants that could be utilized in Ge. Provide two examples of acceptor dopants that could be utilized in GaAs. For GaAs, specify which lattice site the dopant atoms occupy. Table 13.5 Properties of Some Common Semiconductors at Room Temperature (300K) Figure 1: Electron and hole mobility as a function of dopant concentration for Ge and GaAs at 300K. From Robert Pierret, Semiconductor Device Fundamentals, Addison Wesley (1996)